Dielectric

Film type
CVD Dielectric
Technology
Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Tool type
Vector Extreme
Solutions
Transistor, Interconnect, Advanced Memory

Dielectric film deposition processes are used to form some of the most difficult-to-produce insulating features in a semiconductor device, including those used in the latest transistors and 3D structures. For some applications, these films need to conform tightly around intricate structures. Other applications require exceptionally smooth films since slight imperfections are multiplied greatly in subsequent layers.

CVD Capabilities
  • USG Oxide (SiH4)

    2,000 +/-5% to 50,000 +/-5% Å

  • TEOS Oxide

    500 +/-5% to 60,000 +/-5% Å

  • SiN

    500 +/-5% to 20,000 +/-5% Å

  • SiC (Nitrogen Doped)

    100 +/-5% to 2,000 +/-5% Å

  • SiC (Oxygen Doped)

    100 +/-5% to 2,000 +/-5% Å

  • NF-ARL (SiON)

    300 +/-5% to 1,000 +/-5% Å

  • Passivation (SiON)

    1,500 +/-5% to 10,000 +/-5% Å

  • Amorphous Carbon (available Jun 2016)

    1,000 +/-5% to 10,000 +/-5% Å

  • Amorphous Silicon

    1,000 +/-5% to 10,000 +/-5% Å

  • CORAL-Carbon Doped Oxide (k=3.0)

    1,000 +/-5% to 20,000 +/-5% Å


Film type
HDP
Technology
Speed NExT
Tool type
High-Density Plasma Chemical Vapor Deposition (HDP-CVD)
Solutions
Transistor, Interconnect, Advanced Memory

Dielectric “gapfill” processes deposit critical insulation layers between conductive and/or active areas by filling openings of various aspect ratios between conducting lines and between devices. With advanced devices, the structures being filled can be very tall and narrow. As a result, high-quality dielectric films are especially important due to the ever increasing possibility of cross-talk and device failure.

HDP Capabilities
  • Oxide STI

    1,000 +/-5% to 10,000 +/-5% Å